Projects
Plasma Dynamics has worked both singly and as part of collaborative
groups. For the larger projects which Plasma Dynamics has undertaken,
it has assembled teams with complementary strengths. As such it has
established a network of experts and sub-contractors which allow
great flexibility in the scope of projects which it can undertake.
We list below some of the projects in which Plasma
Dynamics has been either the prime or sub-contractor.
- Development of 3D integrated microwave field, plasma, reacting fluid flow
and surface chemistry simulation with application to deposition of SiO2 thin
films
- Development and modelling of a novel large area reactor for the
deposition of diamond thin films.
- Modelling of electrostatic fields for ESC applications
- Modelling of electrostatic field modifications due to
grooves and features in electrostatic chucks.
- Modelling of ECR reactor for deposition of SiO_2 films
- Development of Monte Carlo charged particle simulation to model
plasma flow in ECR reactor for $SiO_2$\ deposition.
- Modelling of microwave field pattern in commercial ECR etcher
- Development of 2D axisymmetric model for microwave cavity fields
coupling into a magnetized plasma for arbitrary cavity geometry.
- Modelling of novel ECR source geometry
- 2D microwave field and charged particle
Monte Carlo codes used to model novel ECR source geometry which
leaves wafer accessible from above. Applications to combination
plasma etch and neutral stream currently being pursued.
- Modelling of Electrostatic Chucks - Comprehensive chuck modelling project
covering electrostatic fields, chucking, de-chucking,
helium transport, arc formation, plasma effects due to structure at chuck
edge, etc. Developed codes to simulate backside helium transport and 2D thermal
profile of wafer for given groove design, 2D fluid plasma code to
simulate phenomena occurring at wafer edge due to focus rings, steps, etc.
- Modelling of Microwave Reactors for Deposition of Diamond Thin Films -
Development of 2D self-consistent, comprehensive simulation of
microwave reactors for diamond thin film deposition. Includes
microwave field solver including cold plasma response, analytic model
for field plasma coupling and electron impact induced processes based
on numerical solutions to Boltzmann equation, multi species diffusion,
$H_2,\ CH_4,\ O_2$\ chemistry module, surface chemistry model, thermal
conduction model and extensive diagnostics.
- Modelling of Very Large Area ECR Reactor for Deposition of SiN and SiC
films
- Extension of Monte Carlo plasma code to incorporate
neutrals. Modelling of deposition uniformity over very large areas
(70 cm diameter) for applications in coating mirror blanks.
- Modelling of Neutral Stream Sources
- Data analysis of various neutral beam sources for
etching.
- Modelling of Chemical Downstream Etchers
- Extension of 2D microwave plasma code to $CF_4,\ O_2,\ N_2,\ Cl_2$\
chemistry. Data analysis to determine main physical effects in
quartz tube erosion, thermal hotspot formation, source and transport
tube chemistry and wafer chamber species transport.
- Modelling of ECR Reactor for etching SiN over GaAs
- Data analysis of processing results obtained by Raytheon, Inc.
concerning the etching of SiN over GaAs, identification of GaAs
damage mechanisms, incorporation of insulating boundary conditions
and surface chemistry into Monte Carlo code.
- Modelling of ion sources for ion implantation
- Determining main physics and identifying source of ``hash'' in
ion beam source
- Electrostatic chuck modelling-Modelling of helium distribution for various
groove patterns.
- CMP modelling - Data analysis and development of conceptual models for
underlying
fundamental phenomena in CMP. Emphasis on identifying measurable
quantities which could be used in conjunction with in situ
diagnostics to increase polishing reproducibility and increase
throughput.
- Modelling of High Density PVD Source using ECR Generated Plasma - Identification
of main physical processes for novel designs applied to HDPVD
sputter sources.
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